Electrophysical properties of Si/SiO2 nanostructures fabricated by direct bonding
- 作者: Gismatulin A.1, Kamaev G.1
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隶属关系:
- Rzhanov Institute of Semiconductor Physics, Siberian Branch
- 期: 卷 42, 编号 6 (2016)
- 页面: 590-593
- 栏目: Article
- URL: https://journals.rcsi.science/1063-7850/article/view/199483
- DOI: https://doi.org/10.1134/S1063785016060079
- ID: 199483
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详细
The results of experimental investigation of diode n++–p++-Si structures, which were fabricated by direct bonding and have tunneling-thin SiO2 with Si nanoclusters embedded into the interface, are presented. The memristive effect with bipolar switching is demonstrated. The introduction of Si nanoclusters into the dielectric reduces the randomness of formation of a conducting channel. Intermediate metastable states are observed in the current–voltage characteristics. This may prove to be important for multibit data storage.
作者简介
A. Gismatulin
Rzhanov Institute of Semiconductor Physics, Siberian Branch
编辑信件的主要联系方式.
Email: anjgis@yandex.ru
俄罗斯联邦, Novosibirsk, 630090
G. Kamaev
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: anjgis@yandex.ru
俄罗斯联邦, Novosibirsk, 630090