Email this article The influence of an In0.52Al0.48As transition layer design on the transport characteristics of a metamorphic high-electron-mobility transistor
- Authors: Lazarenko A.A.1, Nikitina E.V.1, Pirogov E.V.1, Sobolev M.S.1, Egorov A.Y.2,3
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Affiliations:
- St. Petersburg Academic University, Nanotechnology Research and Education Center
- Ioffe Physical Technical Institute
- St. Petersburg National Research University of Information Technologies
- Issue: Vol 42, No 3 (2016)
- Pages: 284-286
- Section: Article
- URL: https://journals.rcsi.science/1063-7850/article/view/197908
- DOI: https://doi.org/10.1134/S1063785016030238
- ID: 197908
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Abstract
We have used the atomic force microscopy and Hall effect measurements to study the influence of In0.52Al0.48As transition layer design on the electron mobility in the InAlAs/InGaAs/GaAs channel of a highelectron- mobility transistor (HEMT) with the metamorphic buffer. The optimum buffer layer favors suppression of the misfit dislocation threading into upper layers of the HEMT heterostructure and prevents development of the surface microrelief.
About the authors
A. A. Lazarenko
St. Petersburg Academic University, Nanotechnology Research and Education Center
Author for correspondence.
Email: lazarenko@spbau.ru
Russian Federation, St. Petersburg, 194021
E. V. Nikitina
St. Petersburg Academic University, Nanotechnology Research and Education Center
Email: lazarenko@spbau.ru
Russian Federation, St. Petersburg, 194021
E. V. Pirogov
St. Petersburg Academic University, Nanotechnology Research and Education Center
Email: lazarenko@spbau.ru
Russian Federation, St. Petersburg, 194021
M. S. Sobolev
St. Petersburg Academic University, Nanotechnology Research and Education Center
Email: lazarenko@spbau.ru
Russian Federation, St. Petersburg, 194021
A. Yu. Egorov
Ioffe Physical Technical Institute; St. Petersburg National Research University of Information Technologies
Email: lazarenko@spbau.ru
Russian Federation, St. Petersburg, 194021; St. Petersburg, 197101
