Отправить статью по E-mail The influence of an In0.52Al0.48As transition layer design on the transport characteristics of a metamorphic high-electron-mobility transistor
- Авторы: Lazarenko A.1, Nikitina E.1, Pirogov E.1, Sobolev M.1, Egorov A.2,3
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Учреждения:
- St. Petersburg Academic University, Nanotechnology Research and Education Center
- Ioffe Physical Technical Institute
- St. Petersburg National Research University of Information Technologies
- Выпуск: Том 42, № 3 (2016)
- Страницы: 284-286
- Раздел: Article
- URL: https://journals.rcsi.science/1063-7850/article/view/197908
- DOI: https://doi.org/10.1134/S1063785016030238
- ID: 197908
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Аннотация
We have used the atomic force microscopy and Hall effect measurements to study the influence of In0.52Al0.48As transition layer design on the electron mobility in the InAlAs/InGaAs/GaAs channel of a highelectron- mobility transistor (HEMT) with the metamorphic buffer. The optimum buffer layer favors suppression of the misfit dislocation threading into upper layers of the HEMT heterostructure and prevents development of the surface microrelief.
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Об авторах
A. Lazarenko
St. Petersburg Academic University, Nanotechnology Research and Education Center
Автор, ответственный за переписку.
Email: lazarenko@spbau.ru
Россия, St. Petersburg, 194021
E. Nikitina
St. Petersburg Academic University, Nanotechnology Research and Education Center
Email: lazarenko@spbau.ru
Россия, St. Petersburg, 194021
E. Pirogov
St. Petersburg Academic University, Nanotechnology Research and Education Center
Email: lazarenko@spbau.ru
Россия, St. Petersburg, 194021
M. Sobolev
St. Petersburg Academic University, Nanotechnology Research and Education Center
Email: lazarenko@spbau.ru
Россия, St. Petersburg, 194021
A. Egorov
Ioffe Physical Technical Institute; St. Petersburg National Research University of Information Technologies
Email: lazarenko@spbau.ru
Россия, St. Petersburg, 194021; St. Petersburg, 197101
