作者的详细信息
Matveev, B.
期 | 栏目 | 标题 | 文件 |
卷 63, 编号 2 (2018) | Solid State Electronics | InAsSbP Photodiodes for 2.6–2.8-μm Wavelengths | |
卷 63, 编号 9 (2018) | Instrument Development and Devices for Practical Applications | InAsSb Diode Optical Pairs for Real-Time Carbon Dioxide Sensors | |
卷 64, 编号 8 (2019) | Solid State Electronics | Comparative Characteristic Analysis of Thermophotovoltaic p-InAsSbP/n-InAs Converters Irradiated on p- and n-Sides |