Escape Depth of Secondary and Photoelectrons from CdTe Films with a Ba Film

B. E. Umirzakov; D. A. Tashmukhamedova; M. A. Tursunov; Y. S. Ergashov; G. Kh. Allayarova

doi:10.1134/S1063784219070260

Escape Depth of Secondary and Photoelectrons from CdTe Films with a Ba Film

作者: Umirzakov B.¹, Tashmukhamedova D.¹, Tursunov M.¹, Ergashov Y.¹, Allayarova G.¹
隶属关系:
1. Tashkent State Technical University
期: 卷 64, 编号 7 (2019)
页面: 1051-1054
栏目: Physical Electronics
URL: https://journals.rcsi.science/1063-7842/article/view/203862
DOI: https://doi.org/10.1134/S1063784219070260
ID: 203862

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Escape zone depths λ' for true-secondary electrons and photoelectrons from pure CdTe and CdTe with a Ba film of thickness θ ≤ 1 monolayer have been estimated for the first time. It is shown that upon a decrease of the work function of the surface by 2 eV, the value of λ' increases by 1.2–1.3 times.