A Lightweight Flexible Solar Cell Based on a Heteroepitaxial InGaP/GaAs Structure
- 作者: Putyato M.1, Valisheva N.1, Petrushkov M.1, Preobrazhenskii V.1, Chistokhin I.1, Semyagin B.1, Emel’yanov E.1, Vasev A.1, Skachkov A.2, Yurko G.2, Nesterenko I.2
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隶属关系:
- Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
- PAO Saturn
- 期: 卷 64, 编号 7 (2019)
- 页面: 1010-1016
- 栏目: Solid State Electronics
- URL: https://journals.rcsi.science/1063-7842/article/view/203819
- DOI: https://doi.org/10.1134/S106378421907020X
- ID: 203819
如何引用文章
详细
Problems arising in fabrication of lightweight flexible solar cells based on heteroepitaxial AIIIBV structures with substrate etching are discussed. Possible solutions are proposed. A tandem lightweight flexible solar cell based on a heteroepitaxial InGaP/GaAs structure was fabricated. Its mass and dimensional characteristics were determined, and bending tests were performed. The specific mass of this solar cell was 0.51 kg/m2, and the allowable bend radius was 36 mm. Its current–voltage curves were measured for the AM0 and AM1.5D spectra at 28.6°C and 25°C, respectively. The cell efficiency was found to be 23.1% and 28.3%.
作者简介
M. Putyato
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
编辑信件的主要联系方式.
Email: puma@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090
N. Valisheva
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: puma@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090
M. Petrushkov
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: puma@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090
V. Preobrazhenskii
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: puma@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090
I. Chistokhin
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: puma@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090
B. Semyagin
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: puma@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090
E. Emel’yanov
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: puma@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090
A. Vasev
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: puma@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090
A. Skachkov
PAO Saturn
Email: puma@isp.nsc.ru
俄罗斯联邦, Krasnodar, 350072
G. Yurko
PAO Saturn
Email: puma@isp.nsc.ru
俄罗斯联邦, Krasnodar, 350072
I. Nesterenko
PAO Saturn
Email: puma@isp.nsc.ru
俄罗斯联邦, Krasnodar, 350072