Electronic and Optical Properties of NiSi 2 /Si Nanofilms

A. K. Tashatov; N. M. Mustafoeva; B. E. Umirzakov; D. A. Tashmukhamedova

doi:10.1134/S1063784219050244

Electronic and Optical Properties of NiSi₂/Si Nanofilms

作者: Tashatov A.¹, Mustafoeva N.¹, Umirzakov B.¹, Tashmukhamedova D.¹
隶属关系:
1. Tashkent State Technical University
期: 卷 64, 编号 5 (2019)
页面: 708-710
栏目: Physical Electronics
URL: https://journals.rcsi.science/1063-7842/article/view/203456
DOI: https://doi.org/10.1134/S1063784219050244
ID: 203456

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Optimum conditions for ion implantation and subsequent annealing for the fabrication of NiSi₂/Si (111) nanofilms with a thickness of 3.0–6.0 nm are determined. It is demonstrated that the energy-band parameters and optical properties typical of thick NiSi₂ films start to set in at d = 5.0–6.0 nm.