Analysis of the process of turning off an integrated thyristor with external MOSFET control


如何引用文章

全文:

开放存取 开放存取
受限制的访问 ##reader.subscriptionAccessGranted##
受限制的访问 订阅存取

详细

The results of an experimental study of the process of turning off an integrated thyristor in a circuit with an inductive load have been presented. It has been demonstrated that the maximum switched current density is limited by high-frequency oscillating process under the conditions of dynamic avalanche breakdown, which produces unstable current pinches. This process starts from the beginning of the voltage rise at the collector junction and is initiated by electron flux injected by the emitter to the space-charge collector region. Possible ways to raise the maximum switched current density have been discussed.

作者简介

I. Grekhov

Ioffe Physical-Technical Institute

编辑信件的主要联系方式.
Email: grekhov@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021

A. Lyublinskiy

Ioffe Physical-Technical Institute

Email: grekhov@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021

A. Skidanov

ZAO VZPP-Mikron

Email: grekhov@mail.ioffe.ru
俄罗斯联邦, Voronezh, 394033


版权所有 © Pleiades Publishing, Ltd., 2017
##common.cookie##