Analysis of the process of turning off an integrated thyristor with external MOSFET control
- 作者: Grekhov I.1, Lyublinskiy A.1, Skidanov A.2
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隶属关系:
- Ioffe Physical-Technical Institute
- ZAO VZPP-Mikron
- 期: 卷 62, 编号 1 (2017)
- 页面: 183-186
- 栏目: Short Communications
- URL: https://journals.rcsi.science/1063-7842/article/view/198842
- DOI: https://doi.org/10.1134/S106378421701008X
- ID: 198842
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详细
The results of an experimental study of the process of turning off an integrated thyristor in a circuit with an inductive load have been presented. It has been demonstrated that the maximum switched current density is limited by high-frequency oscillating process under the conditions of dynamic avalanche breakdown, which produces unstable current pinches. This process starts from the beginning of the voltage rise at the collector junction and is initiated by electron flux injected by the emitter to the space-charge collector region. Possible ways to raise the maximum switched current density have been discussed.
作者简介
I. Grekhov
Ioffe Physical-Technical Institute
编辑信件的主要联系方式.
Email: grekhov@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
A. Lyublinskiy
Ioffe Physical-Technical Institute
Email: grekhov@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
A. Skidanov
ZAO VZPP-Mikron
Email: grekhov@mail.ioffe.ru
俄罗斯联邦, Voronezh, 394033