Analysis of the process of turning off an integrated thyristor with external MOSFET control
- Authors: Grekhov I.V.1, Lyublinskiy A.G.1, Skidanov A.A.2
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Affiliations:
- Ioffe Physical-Technical Institute
- ZAO VZPP-Mikron
- Issue: Vol 62, No 1 (2017)
- Pages: 183-186
- Section: Short Communications
- URL: https://journals.rcsi.science/1063-7842/article/view/198842
- DOI: https://doi.org/10.1134/S106378421701008X
- ID: 198842
Cite item
Abstract
The results of an experimental study of the process of turning off an integrated thyristor in a circuit with an inductive load have been presented. It has been demonstrated that the maximum switched current density is limited by high-frequency oscillating process under the conditions of dynamic avalanche breakdown, which produces unstable current pinches. This process starts from the beginning of the voltage rise at the collector junction and is initiated by electron flux injected by the emitter to the space-charge collector region. Possible ways to raise the maximum switched current density have been discussed.
About the authors
I. V. Grekhov
Ioffe Physical-Technical Institute
Author for correspondence.
Email: grekhov@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
A. G. Lyublinskiy
Ioffe Physical-Technical Institute
Email: grekhov@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
A. A. Skidanov
ZAO VZPP-Mikron
Email: grekhov@mail.ioffe.ru
Russian Federation, Voronezh, 394033