IR photodetectors operating under background illumination
- 作者: Bakhadyrkhanov M.1, Isamov S.1
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隶属关系:
- Tashkent State Technical University
- 期: 卷 61, 编号 3 (2016)
- 页面: 458-460
- 栏目: Short Communications
- URL: https://journals.rcsi.science/1063-7842/article/view/196987
- DOI: https://doi.org/10.1134/S106378421603004X
- ID: 196987
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详细
The spectral dependence of the photoconductivity of silicon with multiply charged manganese nanoclusters is studied at different background currents. The spectral ranges where the IR quenching of the photoconductivity takes place and a shift in the photon energy at which the quenching efficiency as a function of the background current reaches a maximum are determined. The results allow us to design low-level IR photodetectors intended for the interval hν = 0.4–0.8 eV in the presence of fairly high background currents.
作者简介
M. Bakhadyrkhanov
Tashkent State Technical University
Email: sobir-i@rambler.ru
乌兹别克斯坦, Universitetskaya ul. 2, Tashkent, 100095
S. Isamov
Tashkent State Technical University
编辑信件的主要联系方式.
Email: sobir-i@rambler.ru
乌兹别克斯坦, Universitetskaya ul. 2, Tashkent, 100095