IR photodetectors operating under background illumination
- Autores: Bakhadyrkhanov M.1, Isamov S.1
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Afiliações:
- Tashkent State Technical University
- Edição: Volume 61, Nº 3 (2016)
- Páginas: 458-460
- Seção: Short Communications
- URL: https://journals.rcsi.science/1063-7842/article/view/196987
- DOI: https://doi.org/10.1134/S106378421603004X
- ID: 196987
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Resumo
The spectral dependence of the photoconductivity of silicon with multiply charged manganese nanoclusters is studied at different background currents. The spectral ranges where the IR quenching of the photoconductivity takes place and a shift in the photon energy at which the quenching efficiency as a function of the background current reaches a maximum are determined. The results allow us to design low-level IR photodetectors intended for the interval hν = 0.4–0.8 eV in the presence of fairly high background currents.
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Sobre autores
M. Bakhadyrkhanov
Tashkent State Technical University
Email: sobir-i@rambler.ru
Uzbequistão, Universitetskaya ul. 2, Tashkent, 100095
S. Isamov
Tashkent State Technical University
Autor responsável pela correspondência
Email: sobir-i@rambler.ru
Uzbequistão, Universitetskaya ul. 2, Tashkent, 100095