Heterostructures with InGaAs/GaAs quantum dots doped by transition elements. Part I: Photoluminescence properties
- Авторы: Dorokhin M.1, Zdoroveyshchev A.1, Malysheva E.1, Danilov Y.1
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Учреждения:
- Research Physicotechnical Institute
- Выпуск: Том 62, № 9 (2017)
- Страницы: 1398-1402
- Раздел: Physics of Nanostructures
- URL: https://journals.rcsi.science/1063-7842/article/view/200012
- DOI: https://doi.org/10.1134/S1063784217090055
- ID: 200012
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Аннотация
The optical properties of InGaAs/GaAs quantum dot heterostructures that are doped by manganese and chromium during growth by Metal-organic vapor phase epitaxy have been studied. Surface topography photoluminescence spectra measurements have demonstrated the possibility of controlling the spectral characteristics of the structure by varying quantum well growth conditions and sizes in the presence of impurity atoms. Research results are explained by the peculiarities of InAs nanoclusters formation on the GaAs surface in the presence of Mn and Cr atoms.
Об авторах
M. Dorokhin
Research Physicotechnical Institute
Автор, ответственный за переписку.
Email: dorokhin@nifti.unn.ru
Россия, pr. Gagarina 23, Nizhny Novgorod, 603950
A. Zdoroveyshchev
Research Physicotechnical Institute
Email: dorokhin@nifti.unn.ru
Россия, pr. Gagarina 23, Nizhny Novgorod, 603950
E. Malysheva
Research Physicotechnical Institute
Email: dorokhin@nifti.unn.ru
Россия, pr. Gagarina 23, Nizhny Novgorod, 603950
Yu. Danilov
Research Physicotechnical Institute
Email: dorokhin@nifti.unn.ru
Россия, pr. Gagarina 23, Nizhny Novgorod, 603950