Heterostructures with InGaAs/GaAs quantum dots doped by transition elements. Part I: Photoluminescence properties
- Авторлар: Dorokhin M.1, Zdoroveyshchev A.1, Malysheva E.1, Danilov Y.1
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Мекемелер:
- Research Physicotechnical Institute
- Шығарылым: Том 62, № 9 (2017)
- Беттер: 1398-1402
- Бөлім: Physics of Nanostructures
- URL: https://journals.rcsi.science/1063-7842/article/view/200012
- DOI: https://doi.org/10.1134/S1063784217090055
- ID: 200012
Дәйексөз келтіру
Аннотация
The optical properties of InGaAs/GaAs quantum dot heterostructures that are doped by manganese and chromium during growth by Metal-organic vapor phase epitaxy have been studied. Surface topography photoluminescence spectra measurements have demonstrated the possibility of controlling the spectral characteristics of the structure by varying quantum well growth conditions and sizes in the presence of impurity atoms. Research results are explained by the peculiarities of InAs nanoclusters formation on the GaAs surface in the presence of Mn and Cr atoms.
Авторлар туралы
M. Dorokhin
Research Physicotechnical Institute
Хат алмасуға жауапты Автор.
Email: dorokhin@nifti.unn.ru
Ресей, pr. Gagarina 23, Nizhny Novgorod, 603950
A. Zdoroveyshchev
Research Physicotechnical Institute
Email: dorokhin@nifti.unn.ru
Ресей, pr. Gagarina 23, Nizhny Novgorod, 603950
E. Malysheva
Research Physicotechnical Institute
Email: dorokhin@nifti.unn.ru
Ресей, pr. Gagarina 23, Nizhny Novgorod, 603950
Yu. Danilov
Research Physicotechnical Institute
Email: dorokhin@nifti.unn.ru
Ресей, pr. Gagarina 23, Nizhny Novgorod, 603950