Heterostructures with InGaAs/GaAs quantum dots doped by transition elements. Part I: Photoluminescence properties
- Autores: Dorokhin M.1, Zdoroveyshchev A.1, Malysheva E.1, Danilov Y.1
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Afiliações:
- Research Physicotechnical Institute
- Edição: Volume 62, Nº 9 (2017)
- Páginas: 1398-1402
- Seção: Physics of Nanostructures
- URL: https://journals.rcsi.science/1063-7842/article/view/200012
- DOI: https://doi.org/10.1134/S1063784217090055
- ID: 200012
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Resumo
The optical properties of InGaAs/GaAs quantum dot heterostructures that are doped by manganese and chromium during growth by Metal-organic vapor phase epitaxy have been studied. Surface topography photoluminescence spectra measurements have demonstrated the possibility of controlling the spectral characteristics of the structure by varying quantum well growth conditions and sizes in the presence of impurity atoms. Research results are explained by the peculiarities of InAs nanoclusters formation on the GaAs surface in the presence of Mn and Cr atoms.
Sobre autores
M. Dorokhin
Research Physicotechnical Institute
Autor responsável pela correspondência
Email: dorokhin@nifti.unn.ru
Rússia, pr. Gagarina 23, Nizhny Novgorod, 603950
A. Zdoroveyshchev
Research Physicotechnical Institute
Email: dorokhin@nifti.unn.ru
Rússia, pr. Gagarina 23, Nizhny Novgorod, 603950
E. Malysheva
Research Physicotechnical Institute
Email: dorokhin@nifti.unn.ru
Rússia, pr. Gagarina 23, Nizhny Novgorod, 603950
Yu. Danilov
Research Physicotechnical Institute
Email: dorokhin@nifti.unn.ru
Rússia, pr. Gagarina 23, Nizhny Novgorod, 603950