Effect of Radio-Frequency and Ionizing Radiation on the ATmega8515 Microcontroller
- Autores: Stepovik A.1, Shamaev E.1, Otstavnov V.1
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Afiliações:
- Zababakhin Institute of Technical Physics (Russian Federal Nuclear Center)
- Edição: Volume 64, Nº 3 (2019)
- Páginas: 407-413
- Seção: Radiophysics
- URL: https://journals.rcsi.science/1063-7842/article/view/203125
- DOI: https://doi.org/10.1134/S106378421903023X
- ID: 203125
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Resumo
Effect of ultrabroadband radiation and bremsstrahlung on a complicated device (ATmega8515) placed in a radio-transparent housing is studied. Similar results are obtained in the two cases: short-term malfunction or hangup. A particular scenario depends on the moment of irradiation relative to the phase of the meander generated by the microcontroller. In the presence of bremsstrahlung, the effect depends on the exposure dose, so that an increase in the duration of the generated phase or hangup can be obtained.
Sobre autores
A. Stepovik
Zababakhin Institute of Technical Physics (Russian Federal Nuclear Center)
Autor responsável pela correspondência
Email: dep5@vniitf.ru
Rússia, Snezhinsk, Chelyabinsk oblast, 456770
E. Shamaev
Zababakhin Institute of Technical Physics (Russian Federal Nuclear Center)
Email: dep5@vniitf.ru
Rússia, Snezhinsk, Chelyabinsk oblast, 456770
V. Otstavnov
Zababakhin Institute of Technical Physics (Russian Federal Nuclear Center)
Email: dep5@vniitf.ru
Rússia, Snezhinsk, Chelyabinsk oblast, 456770