Effect of Radio-Frequency and Ionizing Radiation on the ATmega8515 Microcontroller
- Авторлар: Stepovik A.1, Shamaev E.1, Otstavnov V.1
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Мекемелер:
- Zababakhin Institute of Technical Physics (Russian Federal Nuclear Center)
- Шығарылым: Том 64, № 3 (2019)
- Беттер: 407-413
- Бөлім: Radiophysics
- URL: https://journals.rcsi.science/1063-7842/article/view/203125
- DOI: https://doi.org/10.1134/S106378421903023X
- ID: 203125
Дәйексөз келтіру
Аннотация
Effect of ultrabroadband radiation and bremsstrahlung on a complicated device (ATmega8515) placed in a radio-transparent housing is studied. Similar results are obtained in the two cases: short-term malfunction or hangup. A particular scenario depends on the moment of irradiation relative to the phase of the meander generated by the microcontroller. In the presence of bremsstrahlung, the effect depends on the exposure dose, so that an increase in the duration of the generated phase or hangup can be obtained.
Авторлар туралы
A. Stepovik
Zababakhin Institute of Technical Physics (Russian Federal Nuclear Center)
Хат алмасуға жауапты Автор.
Email: dep5@vniitf.ru
Ресей, Snezhinsk, Chelyabinsk oblast, 456770
E. Shamaev
Zababakhin Institute of Technical Physics (Russian Federal Nuclear Center)
Email: dep5@vniitf.ru
Ресей, Snezhinsk, Chelyabinsk oblast, 456770
V. Otstavnov
Zababakhin Institute of Technical Physics (Russian Federal Nuclear Center)
Email: dep5@vniitf.ru
Ресей, Snezhinsk, Chelyabinsk oblast, 456770