Recombination in converters of β-radiation energy to electrical energy
- Autores: Abanin I.1, Amelichev V.1, Bulyarskii S.1, Lakalin A.1
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Afiliações:
- Research and Production Complex Technological Center
- Edição: Volume 61, Nº 12 (2016)
- Páginas: 1838-1843
- Seção: Solid State Electronics
- URL: https://journals.rcsi.science/1063-7842/article/view/198643
- DOI: https://doi.org/10.1134/S1063784216120021
- ID: 198643
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Resumo
β-to-electric energy converters based on high-ohmic silicon, as well as processes that provide a high conversion efficiency, have been studied. It has been shown that the conversion efficiency is related to recombination in the space-charge region of converters at low levels of injection. A technique for determining the parameters of recombination centers that is built on new conversion algorithms has been developed. These algorithms make it possible to change the monotonic (and exponential as a whole) current–voltage characteristic of the device to a singular curve and find the parameters of recombination centers. These parameters have been calculated in a wide temperature range. Regions in the temperature–forward bias coordinates have been revealed in which recombination fluxes are captured by a recombination center, which influences the saturation current of the current–voltage characteristic and the conversion efficiency.
Sobre autores
I. Abanin
Research and Production Complex Technological Center
Email: bulyar2954@mail.ru
Rússia, proezd 4806, 5, Zelenograd, Moscow, 124498
V. Amelichev
Research and Production Complex Technological Center
Email: bulyar2954@mail.ru
Rússia, proezd 4806, 5, Zelenograd, Moscow, 124498
S. Bulyarskii
Research and Production Complex Technological Center
Autor responsável pela correspondência
Email: bulyar2954@mail.ru
Rússia, proezd 4806, 5, Zelenograd, Moscow, 124498
A. Lakalin
Research and Production Complex Technological Center
Email: bulyar2954@mail.ru
Rússia, proezd 4806, 5, Zelenograd, Moscow, 124498