Physical properties of carbon films obtained by methane pyrolysis in an electric field
- Autores: Brantov S.1, Tereshchenko A.1, Shteinman E.1, Yakimov E.2
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Afiliações:
- Institute of Solid-State Physics
- Institute of Problems of Microelectronics and Ultrapure Materials
- Edição: Volume 61, Nº 3 (2016)
- Páginas: 428-431
- Seção: Physics of Nanostructures
- URL: https://journals.rcsi.science/1063-7842/article/view/196966
- DOI: https://doi.org/10.1134/S1063784216030051
- ID: 196966
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Resumo
A method of synthesizing carbon films on single-crystal silicon substrates by methane pyrolysis in an electrical field is suggested. The pressure and temperature arising in a working chamber when the substrate is exposed to C–4 ions during pyrolysis are measured. Ion bombardment generates nuclei in the form of fibers about 2 μm in diameter providing the growth of a polycrystalline film. The resulting material is examined using electron microscopy and photo- and cathodoluminescence. Synthesized films are a composite material the matrix of which contains nanoclusters of a dissimilar crystalline nature. The effect of considerable two-stage decrease in the resistivity of the film material with increasing temperature from 300 to 1750 K is discovered. This points to the semiconducting properties of thick carbon films.
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Sobre autores
S. Brantov
Institute of Solid-State Physics
Autor responsável pela correspondência
Email: brantov@issp.ac.ru
Rússia, ul. Akademika Osip’yana 2, Chernogolovka, Moscow oblast, 142432
A. Tereshchenko
Institute of Solid-State Physics
Email: brantov@issp.ac.ru
Rússia, ul. Akademika Osip’yana 2, Chernogolovka, Moscow oblast, 142432
E. Shteinman
Institute of Solid-State Physics
Email: brantov@issp.ac.ru
Rússia, ul. Akademika Osip’yana 2, Chernogolovka, Moscow oblast, 142432
E. Yakimov
Institute of Problems of Microelectronics and Ultrapure Materials
Email: brantov@issp.ac.ru
Rússia, ul. Akademika Osip’yana 5, Chernogolovka, Moscow oblast, 142432