Physical properties of carbon films obtained by methane pyrolysis in an electric field
- Authors: Brantov S.K.1, Tereshchenko A.N.1, Shteinman E.A.1, Yakimov E.B.2
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Affiliations:
- Institute of Solid-State Physics
- Institute of Problems of Microelectronics and Ultrapure Materials
- Issue: Vol 61, No 3 (2016)
- Pages: 428-431
- Section: Physics of Nanostructures
- URL: https://journals.rcsi.science/1063-7842/article/view/196966
- DOI: https://doi.org/10.1134/S1063784216030051
- ID: 196966
Cite item
Abstract
A method of synthesizing carbon films on single-crystal silicon substrates by methane pyrolysis in an electrical field is suggested. The pressure and temperature arising in a working chamber when the substrate is exposed to C–4 ions during pyrolysis are measured. Ion bombardment generates nuclei in the form of fibers about 2 μm in diameter providing the growth of a polycrystalline film. The resulting material is examined using electron microscopy and photo- and cathodoluminescence. Synthesized films are a composite material the matrix of which contains nanoclusters of a dissimilar crystalline nature. The effect of considerable two-stage decrease in the resistivity of the film material with increasing temperature from 300 to 1750 K is discovered. This points to the semiconducting properties of thick carbon films.
About the authors
S. K. Brantov
Institute of Solid-State Physics
Author for correspondence.
Email: brantov@issp.ac.ru
Russian Federation, ul. Akademika Osip’yana 2, Chernogolovka, Moscow oblast, 142432
A. N. Tereshchenko
Institute of Solid-State Physics
Email: brantov@issp.ac.ru
Russian Federation, ul. Akademika Osip’yana 2, Chernogolovka, Moscow oblast, 142432
E. A. Shteinman
Institute of Solid-State Physics
Email: brantov@issp.ac.ru
Russian Federation, ul. Akademika Osip’yana 2, Chernogolovka, Moscow oblast, 142432
E. B. Yakimov
Institute of Problems of Microelectronics and Ultrapure Materials
Email: brantov@issp.ac.ru
Russian Federation, ul. Akademika Osip’yana 5, Chernogolovka, Moscow oblast, 142432