Annular Multi-Tip Field Emitters with Metal–Fullerene Protective Coatings
- Авторлар: Sominskii G.1, Tumareva T.1, Taradaev E.1, Rukavitsyna A.1, Givargizov M.2, Stepanova A.2
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Мекемелер:
- Peter-the-Great Polytechnic University
- Shubnikov Institute of Crystallography, Russian Academy of Sciences
- Шығарылым: Том 64, № 2 (2019)
- Беттер: 270-273
- Бөлім: Physical Electronics
- URL: https://journals.rcsi.science/1063-7842/article/view/202939
- DOI: https://doi.org/10.1134/S106378421902021X
- ID: 202939
Дәйексөз келтіру
Аннотация
A technology of creation of annular silicon field emitters with bilayer metal–fullerene coating has been developed and their performance has been studied. It has been shown that annular emitters with a surface area of about 0.3 cm2 provide a current up to 100–110 mA and stably operate under conditions of technical vacuum (~10–7 Torr).
Авторлар туралы
G. Sominskii
Peter-the-Great Polytechnic University
Хат алмасуға жауапты Автор.
Email: sominski@rphf.spbstu.ru
Ресей, St. Petersburg, 195251
T. Tumareva
Peter-the-Great Polytechnic University
Email: sominski@rphf.spbstu.ru
Ресей, St. Petersburg, 195251
E. Taradaev
Peter-the-Great Polytechnic University
Email: sominski@rphf.spbstu.ru
Ресей, St. Petersburg, 195251
A. Rukavitsyna
Peter-the-Great Polytechnic University
Email: sominski@rphf.spbstu.ru
Ресей, St. Petersburg, 195251
M. Givargizov
Shubnikov Institute of Crystallography, Russian Academy of Sciences
Email: sominski@rphf.spbstu.ru
Ресей, Moscow, 119333
A. Stepanova
Shubnikov Institute of Crystallography, Russian Academy of Sciences
Email: sominski@rphf.spbstu.ru
Ресей, Moscow, 119333