Annular Multi-Tip Field Emitters with Metal–Fullerene Protective Coatings

G. G. Sominskii; T. A. Tumareva; E. P. Taradaev; A. A. Rukavitsyna; M. E. Givargizov; A. N. Stepanova

doi:10.1134/S106378421902021X

Annular Multi-Tip Field Emitters with Metal–Fullerene Protective Coatings

Authors: Sominskii G.G.¹, Tumareva T.A.¹, Taradaev E.P.¹, Rukavitsyna A.A.¹, Givargizov M.E.², Stepanova A.N.²
Affiliations:
1. Peter-the-Great Polytechnic University
2. Shubnikov Institute of Crystallography, Russian Academy of Sciences
Issue: Vol 64, No 2 (2019)
Pages: 270-273
Section: Physical Electronics
URL: https://journals.rcsi.science/1063-7842/article/view/202939
DOI: https://doi.org/10.1134/S106378421902021X
ID: 202939

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Abstract

A technology of creation of annular silicon field emitters with bilayer metal–fullerene coating has been developed and their performance has been studied. It has been shown that annular emitters with a surface area of about 0.3 cm² provide a current up to 100–110 mA and stably operate under conditions of technical vacuum (~10^–7 Torr).