Annular Multi-Tip Field Emitters with Metal–Fullerene Protective Coatings
- Authors: Sominskii G.G.1, Tumareva T.A.1, Taradaev E.P.1, Rukavitsyna A.A.1, Givargizov M.E.2, Stepanova A.N.2
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Affiliations:
- Peter-the-Great Polytechnic University
- Shubnikov Institute of Crystallography, Russian Academy of Sciences
- Issue: Vol 64, No 2 (2019)
- Pages: 270-273
- Section: Physical Electronics
- URL: https://journals.rcsi.science/1063-7842/article/view/202939
- DOI: https://doi.org/10.1134/S106378421902021X
- ID: 202939
Cite item
Abstract
A technology of creation of annular silicon field emitters with bilayer metal–fullerene coating has been developed and their performance has been studied. It has been shown that annular emitters with a surface area of about 0.3 cm2 provide a current up to 100–110 mA and stably operate under conditions of technical vacuum (~10–7 Torr).
About the authors
G. G. Sominskii
Peter-the-Great Polytechnic University
Author for correspondence.
Email: sominski@rphf.spbstu.ru
Russian Federation, St. Petersburg, 195251
T. A. Tumareva
Peter-the-Great Polytechnic University
Email: sominski@rphf.spbstu.ru
Russian Federation, St. Petersburg, 195251
E. P. Taradaev
Peter-the-Great Polytechnic University
Email: sominski@rphf.spbstu.ru
Russian Federation, St. Petersburg, 195251
A. A. Rukavitsyna
Peter-the-Great Polytechnic University
Email: sominski@rphf.spbstu.ru
Russian Federation, St. Petersburg, 195251
M. E. Givargizov
Shubnikov Institute of Crystallography, Russian Academy of Sciences
Email: sominski@rphf.spbstu.ru
Russian Federation, Moscow, 119333
A. N. Stepanova
Shubnikov Institute of Crystallography, Russian Academy of Sciences
Email: sominski@rphf.spbstu.ru
Russian Federation, Moscow, 119333