Influence of the Ohmic Contact Structure on the Performance of GaAs/AlGaAs Photovoltaic Converters
- Авторлар: Malevskaya A.1, Kalinovskii V.1, Il’inskaya N.1, Malevskii D.1, Kontrosh E.1, Shvarts M.1, Andreev V.1
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Мекемелер:
- Ioffe Institute
- Шығарылым: Том 63, № 8 (2018)
- Беттер: 1177-1181
- Бөлім: Solid State Electronics
- URL: https://journals.rcsi.science/1063-7842/article/view/201839
- DOI: https://doi.org/10.1134/S106378421808011X
- ID: 201839
Дәйексөз келтіру
Аннотация
A multilayer system of ohmic contacts for GaAs/AlGaAs photovoltaic converters has been developed. A method of ohmic contact blackening is suggested with the aim of improving the coefficient of optical signal reflection from an Ag/Au/Ag multilayer contact. Owing to blackening, the reflection coefficient has been decreased more than tenfold.
Авторлар туралы
A. Malevskaya
Ioffe Institute
Хат алмасуға жауапты Автор.
Email: amalevskaya@mail.ioffe.ru
Ресей, St. Petersburg, 194021
V. Kalinovskii
Ioffe Institute
Email: amalevskaya@mail.ioffe.ru
Ресей, St. Petersburg, 194021
N. Il’inskaya
Ioffe Institute
Email: amalevskaya@mail.ioffe.ru
Ресей, St. Petersburg, 194021
D. Malevskii
Ioffe Institute
Email: amalevskaya@mail.ioffe.ru
Ресей, St. Petersburg, 194021
E. Kontrosh
Ioffe Institute
Email: amalevskaya@mail.ioffe.ru
Ресей, St. Petersburg, 194021
M. Shvarts
Ioffe Institute
Email: amalevskaya@mail.ioffe.ru
Ресей, St. Petersburg, 194021
V. Andreev
Ioffe Institute
Email: amalevskaya@mail.ioffe.ru
Ресей, St. Petersburg, 194021