Influence of the Ohmic Contact Structure on the Performance of GaAs/AlGaAs Photovoltaic Converters

A. V. Malevskaya; V. S. Kalinovskii; N. D. Il’inskaya; D. A. Malevskii; E. V. Kontrosh; M. Z. Shvarts; V. M. Andreev

doi:10.1134/S106378421808011X

Influence of the Ohmic Contact Structure on the Performance of GaAs/AlGaAs Photovoltaic Converters

Authors: Malevskaya A.V.¹, Kalinovskii V.S.¹, Il’inskaya N.D.¹, Malevskii D.A.¹, Kontrosh E.V.¹, Shvarts M.Z.¹, Andreev V.M.¹
Affiliations:
1. Ioffe Institute
Issue: Vol 63, No 8 (2018)
Pages: 1177-1181
Section: Solid State Electronics
URL: https://journals.rcsi.science/1063-7842/article/view/201839
DOI: https://doi.org/10.1134/S106378421808011X
ID: 201839

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Abstract

A multilayer system of ohmic contacts for GaAs/AlGaAs photovoltaic converters has been developed. A method of ohmic contact blackening is suggested with the aim of improving the coefficient of optical signal reflection from an Ag/Au/Ag multilayer contact. Owing to blackening, the reflection coefficient has been decreased more than tenfold.