Email this article Comparative Characteristic Analysis of Thermophotovoltaic p-InAsSbP/n-InAs Converters Irradiated on p- and n-Sides
- Authors: Matveev B.A.1, Ratushnyi V.I.2, Rybal’chenko A.Y.2
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Affiliations:
- Ioffe Institute, Russian Academy of Sciences
- Volgodonsk Engineering Technical Institute, National Research Nuclear University MEPhI (Moscow Engineering Physics Institute)
- Issue: Vol 64, No 8 (2019)
- Pages: 1164-1167
- Section: Solid State Electronics
- URL: https://journals.rcsi.science/1063-7842/article/view/203972
- DOI: https://doi.org/10.1134/S1063784219080140
- ID: 203972
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Abstract
The basic characteristics of thermophotovoltaic heterostructure p-InAsSbP/n-InAs converters have been simulated. The converters have been designed so that a contact to the irradiated p-InAsSbP layer has a limited area or, in the flip-chip design, radiation is introduced through a contact-free part of the n+-InAs substrate. It has been shown that the design features of the converter influence its efficiency and active region temperature.
About the authors
B. A. Matveev
Ioffe Institute, Russian Academy of Sciences
Author for correspondence.
Email: ioffeled@mail.ru
Russian Federation, St. Petersburg, 194021
V. I. Ratushnyi
Volgodonsk Engineering Technical Institute, National Research Nuclear University MEPhI(Moscow Engineering Physics Institute)
Email: ioffeled@mail.ru
Russian Federation, Volgodonsk, Rostov oblast, 347360
A. Yu. Rybal’chenko
Volgodonsk Engineering Technical Institute, National Research Nuclear University MEPhI(Moscow Engineering Physics Institute)
Email: ioffeled@mail.ru
Russian Federation, Volgodonsk, Rostov oblast, 347360
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