Comparative Characteristic Analysis of Thermophotovoltaic p-InAsSbP/n-InAs Converters Irradiated on p- and n-Sides

Аннотация

The basic characteristics of thermophotovoltaic heterostructure p-InAsSbP/n-InAs converters have been simulated. The converters have been designed so that a contact to the irradiated p-InAsSbP layer has a limited area or, in the flip-chip design, radiation is introduced through a contact-free part of the n⁺-InAs substrate. It has been shown that the design features of the converter influence its efficiency and active region temperature.