Theoretical Analysis of the Effect of  dU / dt  in 4H–SiC Thyristor Structures

S. N. Yurkov; T. T. Mnatsakanov; A. G. Tandoev

doi:10.1134/S1063784218100250

Theoretical Analysis of the Effect of dU/dt in 4H–SiC Thyristor Structures

作者: Yurkov S.N.¹, Mnatsakanov T.T.¹, Tandoev A.G.¹
隶属关系:
1. Moscow Power Engineering Institute
期: 卷 63, 编号 10 (2018)
页面: 1497-1503
栏目: Solid State Electronics
URL: https://journals.rcsi.science/1063-7842/article/view/202162
DOI: https://doi.org/10.1134/S1063784218100250
ID: 202162

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详细

On the basis of numerical simulation, specificities of the effect of dU/dt in 4H–SiC thyristor structures, related to realization of the recently discovered triggering α-mechanism are analyzed. It is shown that one of the manifestations of this mechanism is a catastrophic reduction in the voltage blocked by a thyristor with an increase in temperature of the structure. Practical ways of eliminating this effect are discussed.