Email this article Theoretical Analysis of the Effect of dU/dt in 4H–SiC Thyristor Structures
- Authors: Yurkov S.N.1, Mnatsakanov T.T.1, Tandoev A.G.1
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Affiliations:
- Moscow Power Engineering Institute
- Issue: Vol 63, No 10 (2018)
- Pages: 1497-1503
- Section: Solid State Electronics
- URL: https://journals.rcsi.science/1063-7842/article/view/202162
- DOI: https://doi.org/10.1134/S1063784218100250
- ID: 202162
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Abstract
On the basis of numerical simulation, specificities of the effect of dU/dt in 4H–SiC thyristor structures, related to realization of the recently discovered triggering α-mechanism are analyzed. It is shown that one of the manifestations of this mechanism is a catastrophic reduction in the voltage blocked by a thyristor with an increase in temperature of the structure. Practical ways of eliminating this effect are discussed.
About the authors
S. N. Yurkov
Moscow Power Engineering Institute
Author for correspondence.
Email: yurkov.sn@mail.ru
Russian Federation, Moscow, 111250
T. T. Mnatsakanov
Moscow Power Engineering Institute
Email: yurkov.sn@mail.ru
Russian Federation, Moscow, 111250
A. G. Tandoev
Moscow Power Engineering Institute
Email: yurkov.sn@mail.ru
Russian Federation, Moscow, 111250
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