Influence of Dopant Incomplete Ionization on the Capacitance of a Reverse-Biased 4H-SiC p+−i−n+ Diode
- Authors: Ivanov P.A.1, Potapov A.S.1, Grekhov I.V.1
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Affiliations:
- Ioffe Institute
- Issue: Vol 63, No 6 (2018)
- Pages: 928-931
- Section: Short Communications
- URL: https://journals.rcsi.science/1063-7842/article/view/201586
- DOI: https://doi.org/10.1134/S1063784218060130
- ID: 201586
Cite item
Abstract
The transient process in an RC circuit with a reverse-biased 4H-SiC p+−i−n+ diode serving as a capacitor has been numerically simulated using the SILVACO TCAD software environment. The model experiment has shown that the charge time of an optimally designed 4H-SiC p+−i−n+ capacitor with dopant incomplete ionization is roughly an order of magnitude shorter than in the hypothetical case of complete ionization. The potential effect of the dopant ionization dynamics on the transient process has been found.
About the authors
P. A. Ivanov
Ioffe Institute
Author for correspondence.
Email: Pavel.Ivanov@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
A. S. Potapov
Ioffe Institute
Email: Pavel.Ivanov@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
I. V. Grekhov
Ioffe Institute
Email: Pavel.Ivanov@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021