Influence of Dopant Incomplete Ionization on the Capacitance of a Reverse-Biased 4H-SiC p+−i−n+ Diode
- 作者: Ivanov P.1, Potapov A.1, Grekhov I.1
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隶属关系:
- Ioffe Institute
- 期: 卷 63, 编号 6 (2018)
- 页面: 928-931
- 栏目: Short Communications
- URL: https://journals.rcsi.science/1063-7842/article/view/201586
- DOI: https://doi.org/10.1134/S1063784218060130
- ID: 201586
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详细
The transient process in an RC circuit with a reverse-biased 4H-SiC p+−i−n+ diode serving as a capacitor has been numerically simulated using the SILVACO TCAD software environment. The model experiment has shown that the charge time of an optimally designed 4H-SiC p+−i−n+ capacitor with dopant incomplete ionization is roughly an order of magnitude shorter than in the hypothetical case of complete ionization. The potential effect of the dopant ionization dynamics on the transient process has been found.
作者简介
P. Ivanov
Ioffe Institute
编辑信件的主要联系方式.
Email: Pavel.Ivanov@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
A. Potapov
Ioffe Institute
Email: Pavel.Ivanov@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
I. Grekhov
Ioffe Institute
Email: Pavel.Ivanov@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021