Fabrication of composite based on GeSi with Ag nanoparticles using ion implantation
- Authors: Batalov R.I.1, Vorobev V.V.2, Nuzhdin V.I.1, Valeev V.F.1, Bayazitov R.M.1, Lyadov N.M.1, Osin Y.N.2, Stepanov A.L.1,2,3
-
Affiliations:
- Zavoisky Physical-Technical Institute
- Kazan Federal University
- Kazan National Research Technological University
- Issue: Vol 61, No 12 (2016)
- Pages: 1861-1867
- Section: Physics of Nanostructures
- URL: https://journals.rcsi.science/1063-7842/article/view/198663
- DOI: https://doi.org/10.1134/S1063784216120069
- ID: 198663
Cite item
Abstract
Comparative analysis of the structural and optical properties of composite layers fabricated with the aid of implantation of single-crystalline silicon (c-Si) using Ge+ (40 keV/1 × 1017 ions/cm2) and Ag+ (30 keV/1.5 × 1017 ions/cm2) ions and sequential irradiation using Ge+ and Ag+ ions is presented. The implantation of the Ge+ ions leads to the formation of Ge: Si fine-grain amorphous surface layer with a thickness of 60 nm and a grain size of 20–40 nm. The implantation of c-Si using Ag+ ions results in the formation of submicron porous amorphous a-Si structure with a thickness of about 50 nm containing ion-synthesized Ag nanoparticles. The penetration of the Ag+ ions in the Ge: Si layer stimulates the formation of pores with Ag nanoparticles with more uniform size distribution. The reflection spectra of the implanted Ag: Si and Ag: GeSi layers exhibit a sharp decrease in the intensity in the UV (220–420 nm) spectral interval relative to the intensity of c-Si by more than 50% owing to the amorphization and structuring of surface. The formation of Ag nanoparticles in the implanted layers gives rise to a selective band of the plasmon resonance at a wavelength of about 820 nm in the optical spectra. Technological methods for fabrication of a composite based on GeSi with Ag nanoparticles are demonstrated in practice.
About the authors
R. I. Batalov
Zavoisky Physical-Technical Institute
Author for correspondence.
Email: batalov@kfti.knc.ru
Russian Federation, Sibirskii trakt 10/7, Kazan, 420029 Tatarstan
V. V. Vorobev
Kazan Federal University
Email: batalov@kfti.knc.ru
Russian Federation, Kremlevskaya ul. 18, Kazan, 420008 Tatarstan
V. I. Nuzhdin
Zavoisky Physical-Technical Institute
Email: batalov@kfti.knc.ru
Russian Federation, Sibirskii trakt 10/7, Kazan, 420029 Tatarstan
V. F. Valeev
Zavoisky Physical-Technical Institute
Email: batalov@kfti.knc.ru
Russian Federation, Sibirskii trakt 10/7, Kazan, 420029 Tatarstan
R. M. Bayazitov
Zavoisky Physical-Technical Institute
Email: batalov@kfti.knc.ru
Russian Federation, Sibirskii trakt 10/7, Kazan, 420029 Tatarstan
N. M. Lyadov
Zavoisky Physical-Technical Institute
Email: batalov@kfti.knc.ru
Russian Federation, Sibirskii trakt 10/7, Kazan, 420029 Tatarstan
Yu. N. Osin
Kazan Federal University
Email: batalov@kfti.knc.ru
Russian Federation, Kremlevskaya ul. 18, Kazan, 420008 Tatarstan
A. L. Stepanov
Zavoisky Physical-Technical Institute; Kazan Federal University; Kazan National Research Technological University
Email: batalov@kfti.knc.ru
Russian Federation, Sibirskii trakt 10/7, Kazan, 420029 Tatarstan; Kremlevskaya ul. 18, Kazan, 420008 Tatarstan; ul. Karla Marksa 68, Kazan, 420015 Tatarstan