Forming Dislocation Pairs in the Ge/GeSi/Si(001) Heterostructure


如何引用文章

全文:

开放存取 开放存取
受限制的访问 ##reader.subscriptionAccessGranted##
受限制的访问 订阅存取

详细

In the Ge/LTGe/GeSi/Si(001) heterostructures, the GeSi buffer layer remains pseudomorphic in a certain range of the heterostructure parameters and growth regimes, while the Ge film is completely relaxed owing to the edge dislocation network at the Ge/GeSi interface. It has been experimentally shown that, along with edge dislocations, dislocations with the Burgers vectors of the a0〈100〉-type form. Their formation is caused by the reaction of 60° dislocations with a unidirectional screw component. In this case, if during the buffer layer relaxation the edge dislocations split with the formation of an edge-type dislocation complex, in which the 60° dislocations remained bound, the dislocations with the Burgers vectors a0〈001〉 split into two independent 60° dislocations.

作者简介

Yu. Bolkhovityanov

Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences

Email: sokolov@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090

A. Gutakovskii

Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences

Email: sokolov@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090

A. Deryabin

Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences

Email: sokolov@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090

L. Sokolov

Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences

编辑信件的主要联系方式.
Email: sokolov@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090

补充文件

附件文件
动作
1. JATS XML

版权所有 © Pleiades Publishing, Ltd., 2019