Forming Dislocation Pairs in the Ge/GeSi/Si(001) Heterostructure
- 作者: Bolkhovityanov Y.B.1, Gutakovskii A.K.1, Deryabin A.S.1, Sokolov L.V.1
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隶属关系:
- Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
- 期: 卷 61, 编号 2 (2019)
- 页面: 145-148
- 栏目: Mechanical Properties, Physics of Strength, and Plasticity
- URL: https://journals.rcsi.science/1063-7834/article/view/204809
- DOI: https://doi.org/10.1134/S1063783419020094
- ID: 204809
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详细
In the Ge/LTGe/GeSi/Si(001) heterostructures, the GeSi buffer layer remains pseudomorphic in a certain range of the heterostructure parameters and growth regimes, while the Ge film is completely relaxed owing to the edge dislocation network at the Ge/GeSi interface. It has been experimentally shown that, along with edge dislocations, dislocations with the Burgers vectors of the a0〈100〉-type form. Their formation is caused by the reaction of 60° dislocations with a unidirectional screw component. In this case, if during the buffer layer relaxation the edge dislocations split with the formation of an edge-type dislocation complex, in which the 60° dislocations remained bound, the dislocations with the Burgers vectors a0〈001〉 split into two independent 60° dislocations.
作者简介
Yu. Bolkhovityanov
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: sokolov@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090
A. Gutakovskii
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: sokolov@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090
A. Deryabin
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: sokolov@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090
L. Sokolov
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
编辑信件的主要联系方式.
Email: sokolov@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090
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