Effect of the stresses caused by substrate on the electrical conductivity of ferromagnetic manganite lanthanum–barium films
- Авторлар: Ovsyannikov G.A.1, Shaikhulov T.A.1, Shakhunov V.A.1, Demidov V.V.1, Andreev N.V.2, Pestun A.E.2, Preobrazhenskii V.L.3
- 
							Мекемелер: 
							- Institute of Radio Engineering and Electronics
- National University for Science and Technology MISiS
- Wave Research Center of the Prokhorov General Physics Institute
 
- Шығарылым: Том 59, № 11 (2017)
- Беттер: 2198-2202
- Бөлім: Magnetism
- URL: https://journals.rcsi.science/1063-7834/article/view/201495
- DOI: https://doi.org/10.1134/S1063783417110245
- ID: 201495
Дәйексөз келтіру
Аннотация
This is a complex study of the electrophysical and magnetic characteristics of epitaxial manganite La0.7Ba0.3MnO3 (LBMO) films under conditions of crystal structure stresses caused by misfit in the lattice parameters of the LBMO crystal and a substrate. The substrate used had the lattice parameter smaller than that in the LBMO crystal. It is shown that the temperature dependence of the electrical resistance of the films at low temperatures is not dependent on the existence of stresses in the film and agrees well with the calculation with allowance made for the interaction of carriers with magnetic excitations in the presence of strongly correlated electronic states. The study of the ferromagnetic resonance line indicates an inhomogeneity of the ferromagnetic phase in the LBMO films and the increase in the ferromagnetic resonance line width with decreasing temperature.
Авторлар туралы
G. Ovsyannikov
Institute of Radio Engineering and Electronics
							Хат алмасуға жауапты Автор.
							Email: gena@hitech.cplire.ru
				                					                																			                												                	Ресей, 							ul. Mokhovaya 11, Moscow, 125009						
T. Shaikhulov
Institute of Radio Engineering and Electronics
														Email: gena@hitech.cplire.ru
				                					                																			                												                	Ресей, 							ul. Mokhovaya 11, Moscow, 125009						
V. Shakhunov
Institute of Radio Engineering and Electronics
														Email: gena@hitech.cplire.ru
				                					                																			                												                	Ресей, 							ul. Mokhovaya 11, Moscow, 125009						
V. Demidov
Institute of Radio Engineering and Electronics
														Email: gena@hitech.cplire.ru
				                					                																			                												                	Ресей, 							ul. Mokhovaya 11, Moscow, 125009						
N. Andreev
National University for Science and Technology MISiS
														Email: gena@hitech.cplire.ru
				                					                																			                												                	Ресей, 							Leninskii pr. 4, Moscow, 119936						
A. Pestun
National University for Science and Technology MISiS
														Email: gena@hitech.cplire.ru
				                					                																			                												                	Ресей, 							Leninskii pr. 4, Moscow, 119936						
V. Preobrazhenskii
Wave Research Center of the Prokhorov General Physics Institute
														Email: gena@hitech.cplire.ru
				                					                																			                												                	Ресей, 							ul. Vavilova 38, Moscow, 117942						
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