Отправить статью по E-mail Relaxation of the electric current in Si3N4: Experiment and numerical simulation
- Авторы: Novikov Y.N.1, Gritsenko V.A.1,2
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Учреждения:
- Rzhanov Institute of Semiconductor Physics, Siberian Branch
- Novosibirsk State University
- Выпуск: Том 59, № 1 (2017)
- Страницы: 47-52
- Раздел: Dielectrics
- URL: https://journals.rcsi.science/1063-7834/article/view/199459
- DOI: https://doi.org/10.1134/S1063783417010255
- ID: 199459
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Аннотация
The relaxation of the electric current in a metal–nitride–oxide–semiconductor structure has been measured experimentally. The experiment has been compared with the calculation based on the two-band conduction model and the multiphonon mechanism of the ionization of traps. The upper estimate obtained for the recombination cross section from the comparison of the experiment with the calculation is found to be 5 × 10–13 cm2.
Об авторах
Yu. Novikov
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Автор, ответственный за переписку.
Email: nov@isp.nsc.ru
Россия, pr. Akademika Lavrentieva 13, Novosibirsk, 630090
V. Gritsenko
Rzhanov Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State University
Email: nov@isp.nsc.ru
Россия, pr. Akademika Lavrentieva 13, Novosibirsk, 630090; ul. Pirogova 2, Novosibirsk, 630090
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