Antiferroelectric films of deuterated betaine phosphate


Дәйексөз келтіру

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Ашық рұқсат Ашық рұқсат
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Рұқсат жабық Тек жазылушылар үшін

Аннотация

Thin films of partially deuterated betaine phosphate have been grown by the evaporation on Al2O3(110) and NdGaO3(001) substrates with a preliminarily deposited structure of interdigitated electrodes. The grown films have a polycrystalline block structure with characteristic dimensions of blocks of the order of 0.1–1.5 mm. The degree of deuteration of the films D varies in the range of 20–50%. It has been found that, at the antiferroelectric phase transition temperature Tcafe = 100–114 K, the fabricated structures exhibit an anomaly of the electrical capacitance C, which is not accompanied by a change in the dielectric loss tangent tanδ. The strong-signal dielectric response is characterized by the appearance of a ferroelectric nonlinearity at temperatures T >Tcafe, which is transformed into an antiferroelectric nonlinearity at T <Tcafe. With a further decrease in the temperature, double dielectric hysteresis loops appear in the antiferroelectric phase. The dielectric properties of the films have been described within the framework of the Landau-type thermodynamic model taking into account the biquadratic coupling ξP2η2 between the polar order parameter P and the nonpolar order parameter η with a positive coefficient ξ. The E–T phase diagram has been constructed.

Авторлар туралы

E. Balashova

Ioffe Physical-Technical Institute

Хат алмасуға жауапты Автор.
Email: balashova@mail.ioffe.ru
Ресей, Politekhnicheskaya ul. 26, St. Petersburg, 194021

B. Krichevtsov

Ioffe Physical-Technical Institute

Email: balashova@mail.ioffe.ru
Ресей, Politekhnicheskaya ul. 26, St. Petersburg, 194021

F. Svinarev

Ioffe Physical-Technical Institute

Email: balashova@mail.ioffe.ru
Ресей, Politekhnicheskaya ul. 26, St. Petersburg, 194021

N. Zaitseva

Ioffe Physical-Technical Institute

Email: balashova@mail.ioffe.ru
Ресей, Politekhnicheskaya ul. 26, St. Petersburg, 194021

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