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Vol 61, No 12 (2019)
Method for Controlling the Polarity of Gallium Nitride Layers in Epitaxial Synthesis of GaN/AlN Heterostructures on Hybrid SiC/Si Substrates
Mizerov A.M., Kukushkin S.A., Sharofidinov S.S., Osipov A.V., Timoshnev S.N., Shubina K.Y., Berezovskaya T.N., Mokhov D.V., Buravlev A.D.
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(Eng)
Vol 58, No 5 (2016)
Pyroelectric and piezoelectric responses of thin AlN films epitaxy-grown on a SiC/Si substrate
Kukushkin S.A., Osipov A.V., Sergeeva O.N., Kiselev D.A., Bogomolov A.A., Solnyshkin A.V., Kaptelov E.Y., Senkevich S.V., Pronin I.P.
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(Eng)
Vol 61, No 12 (2019)
Forming the GaN Nanocrystals on the Graphene-Like g-AlN and g-Si3N3 Surface
Kozhukhov A.S., Aleksandrov I.A., Rzheutski N.V., Lebiadok E.V., Razumets E.A., Zhuravlev K.S., Milakhin D.S., Malin T.V., Mansurov V.G., Galitsyn Y.G.
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(Eng)
Vol 58, No 4 (2016)
Electrophysical properties of CdxHg1–xTe (x = 0.3) films grown by molecular beam epitaxy on Si(013) substrates
Varavin V.S., Marin D.V., Yakushev M.V.
PDF
(Eng)
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