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A New Method of Growing AlN, GaN, and AlGaN Bulk Crystals Using Hybrid SiC/Si Substrates
Kukushkin S.A., Sharofidinov S.S.
Electronic structure and magnetic properties of doped Al1–xTixN (x = 0.03, 0.25) compositions based on cubic aluminum nitride from ab initio simulation data
Bannikov V.V., Beketov A.R., Baranov M.V., Elagin A.A., Kudyakova V.S., Shishkin R.A.
Influence of Orientation of a Silicon Substrate with a Buffer Silicon Carbide Layer on Dielectric and Polar Properties of Aluminum Nitride Films
Sergeeva O.N., Solnyshkin A.V., Kiselev D.A., Il’ina T.S., Kukushkin S.A., Sharofidinov S.S., Kaptelov E.Y., Pronin I.P.
Pyroelectric and piezoelectric responses of thin AlN films epitaxy-grown on a SiC/Si substrate
Kukushkin S.A., Osipov A.V., Sergeeva O.N., Kiselev D.A., Bogomolov A.A., Solnyshkin A.V., Kaptelov E.Y., Senkevich S.V., Pronin I.P.
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