Low-Temperature Synthesis of α-SiC Nanocrystals
- Authors: Nussupov K.K.1, Beisenkhanov N.B.1, Bakranova D.I.1, Keinbai S.1, Turakhun A.A.1, Sultan A.A.1
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Affiliations:
- Kazakh–British Technical University
- Issue: Vol 61, No 12 (2019)
- Pages: 2473-2479
- Section: Surface Physics and Thin Films
- URL: https://journals.rcsi.science/1063-7834/article/view/207130
- DOI: https://doi.org/10.1134/S1063783419120333
- ID: 207130
Cite item
Abstract
Thick SiCx films have been deposited on a c-Si surface by radiofrequency (rf) magnetron sputtering (150 W, 13.56 MHz, Ar flow 2.4 L/h, 0.4 Pa) of graphite and silicon targets. The X-ray diffraction study shows that fast annealing of the SiCx film deposited on the c-Si surface for 3 h leads to the low-temperature (970°C) formation of hexagonal structural phases α-SiC (6H-SiC and other) along with the cubic modification of silicon carbide β-SiC. The IR spectroscopy has shown the formation of SiC nanocrystal nuclei due to the energy action of the rf plasma ions on the upper layer of the SiC film during its growth. The data of X-ray reflectometry demonstrate a high density of the films up to 3.59 g/cm2 as a result of formation of dense C and SiC clusters in the layers under action of the rf plasma.
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About the authors
K. Kh. Nussupov
Kazakh–British Technical University
Author for correspondence.
Email: rich-famouskair@mail.ru
Kazakhstan, Almaty
N. B. Beisenkhanov
Kazakh–British Technical University
Author for correspondence.
Email: beisen@mail.ru
Kazakhstan, Almaty
D. I. Bakranova
Kazakh–British Technical University
Email: beisen@mail.ru
Kazakhstan, Almaty
S. Keinbai
Kazakh–British Technical University
Email: beisen@mail.ru
Kazakhstan, Almaty
A. A. Turakhun
Kazakh–British Technical University
Email: beisen@mail.ru
Kazakhstan, Almaty
A. A. Sultan
Kazakh–British Technical University
Email: beisen@mail.ru
Kazakhstan, Almaty