Email this article Phenomenological Models of Nucleation and Growth of Metal on a Semiconductor
- Authors: Plyusnin N.I.1
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Affiliations:
- Institute of Automation and Control Processes, Far East Branch, Russian Academy of Sciences
- Issue: Vol 61, No 12 (2019)
- Pages: 2431-2433
- Section: Phase Transitions
- URL: https://journals.rcsi.science/1063-7834/article/view/207043
- DOI: https://doi.org/10.1134/S1063783419120394
- ID: 207043
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Abstract
Four modes of metal growth on a semiconductor substrate have been detected and distinguished on the basis of experimental data obtained under similar conditions using hot wall epitaxy. These modes are achieved at certain ratios between translational kinetic energy of vapor deposited onto substrate and its temperature. The mechanism of adaptation to the substrate of nanophase wetting coating of metal is proposed when the mode of pure metal growth is implemented, as is the structural model of this coating.
About the authors
N. I. Plyusnin
Institute of Automation and Control Processes, Far East Branch, Russian Academy of Sciences
Author for correspondence.
Email: plusnin@iacp.dvo.ru
Russian Federation, Vladivostok, 690041
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