Conductivity of Manganite Films under the Action of Tension Caused by the Deformation of Substrate
- Authors: Ovsyannikov G.A.1, Shaikhulov T.A.1, Shakhunov V.A.1, Klimov A.A.1,2, Preobrazhenskii V.L.3, Tiercelin N.2, Pernod P.2
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Affiliations:
- Kotelnikov Institute of Radio Engineering and Electronics, Russian Academy of Sciences
- University of Lille, CNRS, Centrale Lille, ISEN, Univ. Valenciennes, UMR 8520-IEMN
- Prokhorov General Physics Institute, Russian Academy of Sciences
- Issue: Vol 61, No 9 (2019)
- Pages: 1665-1669
- Section: Surface Physics and Thin Films
- URL: https://journals.rcsi.science/1063-7834/article/view/206188
- DOI: https://doi.org/10.1134/S1063783419090208
- ID: 206188
Cite item
Abstract
The electron transport properties of strained thin La0.7Ba0.3MnO3 (LBMO) epitaxial films are studied. Films 40–100 nm in thickness were prepared by laser ablation at a temperature T = 700–800°C in pure oxygen atmosphere of 0.3–1 mBar. Ferroelectric crystal substrates (011)0.79PbMg1/3Nb2/3O3–0.21-PbTiO3 (PMN–PT) with a Curie temperature of 150°C and high piezoelectric constants were used to create a mechanical stress. The ferroelectric polarization and piezoelectric effects on the electrical parameters of LBMO films are studied.
Keywords
About the authors
G. A. Ovsyannikov
Kotelnikov Institute of Radio Engineering and Electronics, Russian Academy of Sciences
Author for correspondence.
Email: gena@hitech.cplire.ru
Russian Federation, Moscow
T. A. Shaikhulov
Kotelnikov Institute of Radio Engineering and Electronics, Russian Academy of Sciences
Email: gena@hitech.cplire.ru
Russian Federation, Moscow
V. A. Shakhunov
Kotelnikov Institute of Radio Engineering and Electronics, Russian Academy of Sciences
Email: gena@hitech.cplire.ru
Russian Federation, Moscow
A. A. Klimov
Kotelnikov Institute of Radio Engineering and Electronics, Russian Academy of Sciences; University of Lille, CNRS, Centrale Lille, ISEN, Univ. Valenciennes, UMR 8520-IEMN
Email: gena@hitech.cplire.ru
Russian Federation, Moscow; Lille, F-59000
V. L. Preobrazhenskii
Prokhorov General Physics Institute, Russian Academy of Sciences
Email: gena@hitech.cplire.ru
Russian Federation, Moscow
N. Tiercelin
University of Lille, CNRS, Centrale Lille, ISEN, Univ. Valenciennes, UMR 8520-IEMN
Email: gena@hitech.cplire.ru
France, Lille, F-59000
P. Pernod
University of Lille, CNRS, Centrale Lille, ISEN, Univ. Valenciennes, UMR 8520-IEMN
Email: gena@hitech.cplire.ru
France, Lille, F-59000
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