Origin of the Concentration Quenching of Luminescence in Zn 2 SiO 4 :Mn Phosphors

T. A. Onufrieva; T. I. Krasnenko; N. A. Zaitseva; I. V. Baklanova; M. V. Rotermel’; I. V. Ivanova; I. D. Popov; R. F. Samigullina

doi:10.1134/S1063783419050238

Origin of the Concentration Quenching of Luminescence in Zn₂SiO₄:Mn Phosphors

Authors: Onufrieva T.A.¹, Krasnenko T.I.¹, Zaitseva N.A.¹^,2, Baklanova I.V.¹, Rotermel’ M.V.¹, Ivanova I.V.¹, Popov I.D.¹, Samigullina R.F.¹
Affiliations:
1. Institute of Solid State Chemistry, Ural Branch, Russian Academy of Sciences
2. Ural State Mining University
Issue: Vol 61, No 5 (2019)
Pages: 806-810
Section: Impurity Centers
URL: https://journals.rcsi.science/1063-7834/article/view/205428
DOI: https://doi.org/10.1134/S1063783419050238
ID: 205428

Cite item

Full Text

Open Access
Restricted Access

Access granted
Restricted Access

Subscription Access

Abstract
About the authors
References
Supplementary files
Statistics

Abstract

The analysis of the unified series of single-phase Zn_2 – 2xMn_2xSiO₄ samples (x ≤ 0.2) has provided the possibility to determine the optimal dopant concentration x = 0.13 for the maximum luminescence intensity. It has been established that the dominating mechanism of concentration luminescence quenching and excitation energy dissipation is the oxidation of some Mn²⁺ activating ions and the growth of defectness in the luminophore due to this process Phosphors.