Optical Spectra of GaSe and GaS Crystals of Different Thicknesses
- 作者: Agekyan V.F.1, Serov A.Y.1, Filosofov N.G.1
- 
							隶属关系: 
							- St. Petersburg State University
 
- 期: 卷 60, 编号 6 (2018)
- 页面: 1223-1225
- 栏目: Semiconductors
- URL: https://journals.rcsi.science/1063-7834/article/view/203290
- DOI: https://doi.org/10.1134/S1063783418060021
- ID: 203290
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The transmission spectra of GaSe and GaS crystals of different thicknesses prepared by mechanical stratification of bulk crystals have been investigated. The quantum-size shifts of exciton resonances in thin GaSe samples are as high as 12 meV, which is close to the exciton binding energy. The high-energy interband transitions in GaSe and GaS are observed near 3.4 and 3.7 eV, respectively.
作者简介
V. Agekyan
St. Petersburg State University
							编辑信件的主要联系方式.
							Email: v.agekyan@spbu.ru
				                					                																			                												                	俄罗斯联邦, 							St. Petersburg, 199034						
A. Serov
St. Petersburg State University
														Email: v.agekyan@spbu.ru
				                					                																			                												                	俄罗斯联邦, 							St. Petersburg, 199034						
N. Filosofov
St. Petersburg State University
														Email: v.agekyan@spbu.ru
				                					                																			                												                	俄罗斯联邦, 							St. Petersburg, 199034						
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