Email this article Single-Photon Emission from InAs/AlGaAs Quantum Dots
- Authors: Rakhlin M.V.1, Belyaev K.G.1, Klimko G.V.1, Mukhin I.S.2,3, Ivanov S.V.1, Toropov A.A.1
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Affiliations:
- Ioffe Institute
- St. Petersburg National Research Academic University
- ITMO University
- Issue: Vol 60, No 4 (2018)
- Pages: 691-694
- Section: Semiconductors
- URL: https://journals.rcsi.science/1063-7834/article/view/202518
- DOI: https://doi.org/10.1134/S1063783418040261
- ID: 202518
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Abstract
The results of investigation of the radiative characteristics of heterostructures with InAs/AlGaAs quantum dots (QDs) grown by molecular beam epitaxy have been presented. The properties of single QDs were determined by spectroscopy of micro-photoluminescence in cylindrical mesa-structures with a diameter of 200–1000 nm or columnar microresonators with distributed Bragg mirrors. The single-photon nature of the radiation is confirmed by measurements and analysis of the second-order correlation function g2(τ) in a wide spectral range from 630 to 730 nm.
About the authors
M. V. Rakhlin
Ioffe Institute
Author for correspondence.
Email: maximrakhlin@mail.ru
Russian Federation, St. Petersburg
K. G. Belyaev
Ioffe Institute
Email: maximrakhlin@mail.ru
Russian Federation, St. Petersburg
G. V. Klimko
Ioffe Institute
Email: maximrakhlin@mail.ru
Russian Federation, St. Petersburg
I. S. Mukhin
St. Petersburg National Research Academic University; ITMO University
Email: maximrakhlin@mail.ru
Russian Federation, St. Petersburg; St. Petersburg
S. V. Ivanov
Ioffe Institute
Email: maximrakhlin@mail.ru
Russian Federation, St. Petersburg
A. A. Toropov
Ioffe Institute
Email: maximrakhlin@mail.ru
Russian Federation, St. Petersburg
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