Polarization effects in quantum-well In28Ga72As/GaAs heterolasers

Abstract

The effect of externally introduced variable strains on the polarization properties of quantum-well In₂₈Ga₇₂As/GaAs laser radiation at room temperature is studied experimentally and theoretically. An analysis of the polarization effects at various values of the excess of the working current over the threshold is performed. Data on the energy for the splitting of the levels of light and heavy holes in the quantum well of the structure under consideration are obtained. It is experimentally proven that the effectiveness of the action of a variable strain on the polarization twist substantially increases with increasing quantum well width.