Effect of the cesium and potassium doping of multiwalled carbon nanotubes grown in an electrical arc on their emission characteristics
- Authors: Izrael’yants K.R.1, Orlov A.P.1, Ormont A.B.1, Chirkova E.G.1
- 
							Affiliations: 
							- Kotel’nikov Institute of Radio Engineering and Electronics
 
- Issue: Vol 59, No 4 (2017)
- Pages: 838-844
- Section: Fullerenes
- URL: https://journals.rcsi.science/1063-7834/article/view/200121
- DOI: https://doi.org/10.1134/S1063783417040084
- ID: 200121
Cite item
Abstract
The effect of cesium and potassium atoms deposited onto multiwalled carbon nanotubes grown in an electrical arc on their emission characteristics was studied. The current–voltage characteristics of the field electron emission of specimens with cesium or potassium doped multiwalled carbon nanotubes of this type were revealed to retain their linear character in the Fowler–Nordheim coordinates within several orders of magnitude of change in the emission current. The deposition of cesium and potassium atoms was shown to lead to a considerable increase in the emission current and a decrease in the work function φ of studied emitters with multiwalled nanotubes. The work function was established to decrease to φ ~ 3.1 eV at an optimal thickness of coating with cesium atoms and to φ ~ 2.9 eV in the case of doping with potassium atoms. Cesium and potassium deposition conditions optimal for the attainment of a maximum emission current were found.
About the authors
K. R. Izrael’yants
Kotel’nikov Institute of Radio Engineering and Electronics
														Email: ormont.73@mail.ru
				                					                																			                												                	Russian Federation, 							ul. Mokhovaya 11-7, Moscow, 125009						
A. P. Orlov
Kotel’nikov Institute of Radio Engineering and Electronics
														Email: ormont.73@mail.ru
				                					                																			                												                	Russian Federation, 							ul. Mokhovaya 11-7, Moscow, 125009						
A. B. Ormont
Kotel’nikov Institute of Radio Engineering and Electronics
							Author for correspondence.
							Email: ormont.73@mail.ru
				                					                																			                												                	Russian Federation, 							ul. Mokhovaya 11-7, Moscow, 125009						
E. G. Chirkova
Kotel’nikov Institute of Radio Engineering and Electronics
														Email: ormont.73@mail.ru
				                					                																			                												                	Russian Federation, 							ul. Mokhovaya 11-7, Moscow, 125009						
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