Comparative analysis of the thickness and electrical conductivity of thin chalcogenide semiconductor films
- Authors: Dan’shina V.V.1, Kalistratova L.F.1
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Affiliations:
- Omsk State Technical University
- Issue: Vol 59, No 1 (2017)
- Pages: 180-183
- Section: Surface Physics and Thin Films
- URL: https://journals.rcsi.science/1063-7834/article/view/199574
- DOI: https://doi.org/10.1134/S106378341701005X
- ID: 199574
Cite item
Abstract
The structure and thickness of zinc and cadmium chalcogenide semiconductor films are studied by X-ray radiography. The film thickness is shown to be comparable with the half-value layer depth. The electrical conductivity of the films increases upon heating in the hydrogen atmosphere and decreases upon heating in carbon oxide. The opposite trend is observed in the ratio between the electrical conductivity and band gap of the initial and oxidized film surfaces.
About the authors
V. V. Dan’shina
Omsk State Technical University
Author for correspondence.
Email: danshina_v@mail.ru
Russian Federation, Omsk, 644033
L. F. Kalistratova
Omsk State Technical University
Email: danshina_v@mail.ru
Russian Federation, Omsk, 644033
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