电邮这篇文章 Tunneling and injection in ferromagnetic structures InGaAs/GaAs/(Ga,Mn)As and InGaAs/n+-GaAs/(Ga,Mn)As
- 作者: Malysheva E.I.1, Dorokhin M.V.1, Zdoroveyshchev A.V.1, Ved’ M.V.2
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隶属关系:
- Physical Technical Research Institute
- Lobachevsky State University of Nizhny Novgorod
- 期: 卷 58, 编号 11 (2016)
- 页面: 2271-2276
- 栏目: Surface Physics and Thin Films
- URL: https://journals.rcsi.science/1063-7834/article/view/199127
- DOI: https://doi.org/10.1134/S1063783416110238
- ID: 199127
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详细
The spin light-emitting diodes based on InGaAs/GaAs heterostructures with a quantum well and an injector in the form of a (Ga,Mn)As ferromagnetic layer have been studied. It has been demonstrated that the efficiency of electron spin injection in the structure with a (Ga,Mn)As/n+-GaAs tunneling barrier can be controlled by varying the parameters of n+-GaAs. The spin injection control mechanisms associated with the thermal activation and tunneling of carriers have been discussed.
作者简介
E. Malysheva
Physical Technical Research Institute
编辑信件的主要联系方式.
Email: malysheva@phys.unn.ru
俄罗斯联邦, pr. Gagarina 23/3, Nizhny Novgorod, 603950
M. Dorokhin
Physical Technical Research Institute
Email: malysheva@phys.unn.ru
俄罗斯联邦, pr. Gagarina 23/3, Nizhny Novgorod, 603950
A. Zdoroveyshchev
Physical Technical Research Institute
Email: malysheva@phys.unn.ru
俄罗斯联邦, pr. Gagarina 23/3, Nizhny Novgorod, 603950
M. Ved’
Lobachevsky State University of Nizhny Novgorod
Email: malysheva@phys.unn.ru
俄罗斯联邦, pr. Gagarina 23, Nizhny Novgorod, 603950
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