Development of Discharge in a Saline Solution at Near-Threshold Voltages
- 作者: Korolev Y.1,2,3, Shemyakin I.1,2, Kasyanov V.1,2, Geyman V.1, Bolotov A.1, Nekhoroshev V.1
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隶属关系:
- Institute of High-Current Electronics, Siberian Branch
- National Research Tomsk State University
- Tomsk Polytechnic University
- 期: 卷 44, 编号 6 (2018)
- 页面: 581-587
- 栏目: Plasma Diagnostics
- URL: https://journals.rcsi.science/1063-780X/article/view/186794
- DOI: https://doi.org/10.1134/S1063780X18060053
- ID: 186794
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详细
The development of a discharge in a point−plane gap filled with a saline solution with a salt content of 3% was studied experimentally. The duration of the voltage pulse applied to the gap was about 2 ms. Data are presented on the formation dynamics of gas microcavities at near-threshold voltages at which gas-discharge plasma appears in some microcavities. The cavities are conglomerates of microbubbles with a typical size of ≈100 μm. At the threshold voltage (≈750 V), the active electrode is covered with a gas layer and the gap voltage is in fact applied to this layer, which leads to the development of discharges in individual microbubbles. In this case, the discharge operates in the form of short current pulses. The number of microcavities filled with plasma increases as the voltage grows above the threshold value. At the plasma boundary, new microbubbles are formed, in which discharges are ignited. As a result, the plasma front propagates from the active electrode into the gap with a characteristic velocity of 103 cm/s.
作者简介
Yu. Korolev
Institute of High-Current Electronics, Siberian Branch; National Research Tomsk State University; Tomsk Polytechnic University
编辑信件的主要联系方式.
Email: korolev@lnp.hcei.tsc.ru
俄罗斯联邦, Tomsk, 634055; Tomsk, 634050; Tomsk, 634050
I. Shemyakin
Institute of High-Current Electronics, Siberian Branch; National Research Tomsk State University
Email: korolev@lnp.hcei.tsc.ru
俄罗斯联邦, Tomsk, 634055; Tomsk, 634050
V. Kasyanov
Institute of High-Current Electronics, Siberian Branch; National Research Tomsk State University
Email: korolev@lnp.hcei.tsc.ru
俄罗斯联邦, Tomsk, 634055; Tomsk, 634050
V. Geyman
Institute of High-Current Electronics, Siberian Branch
Email: korolev@lnp.hcei.tsc.ru
俄罗斯联邦, Tomsk, 634055
A. Bolotov
Institute of High-Current Electronics, Siberian Branch
Email: korolev@lnp.hcei.tsc.ru
俄罗斯联邦, Tomsk, 634055
V. Nekhoroshev
Institute of High-Current Electronics, Siberian Branch
Email: korolev@lnp.hcei.tsc.ru
俄罗斯联邦, Tomsk, 634055