Development of Discharge in a Saline Solution at Near-Threshold Voltages
- Авторы: Korolev Y.1,2,3, Shemyakin I.1,2, Kasyanov V.1,2, Geyman V.1, Bolotov A.1, Nekhoroshev V.1
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Учреждения:
- Institute of High-Current Electronics, Siberian Branch
- National Research Tomsk State University
- Tomsk Polytechnic University
- Выпуск: Том 44, № 6 (2018)
- Страницы: 581-587
- Раздел: Plasma Diagnostics
- URL: https://journals.rcsi.science/1063-780X/article/view/186794
- DOI: https://doi.org/10.1134/S1063780X18060053
- ID: 186794
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Аннотация
The development of a discharge in a point−plane gap filled with a saline solution with a salt content of 3% was studied experimentally. The duration of the voltage pulse applied to the gap was about 2 ms. Data are presented on the formation dynamics of gas microcavities at near-threshold voltages at which gas-discharge plasma appears in some microcavities. The cavities are conglomerates of microbubbles with a typical size of ≈100 μm. At the threshold voltage (≈750 V), the active electrode is covered with a gas layer and the gap voltage is in fact applied to this layer, which leads to the development of discharges in individual microbubbles. In this case, the discharge operates in the form of short current pulses. The number of microcavities filled with plasma increases as the voltage grows above the threshold value. At the plasma boundary, new microbubbles are formed, in which discharges are ignited. As a result, the plasma front propagates from the active electrode into the gap with a characteristic velocity of 103 cm/s.
Об авторах
Yu. Korolev
Institute of High-Current Electronics, Siberian Branch; National Research Tomsk State University; Tomsk Polytechnic University
Автор, ответственный за переписку.
Email: korolev@lnp.hcei.tsc.ru
Россия, Tomsk, 634055; Tomsk, 634050; Tomsk, 634050
I. Shemyakin
Institute of High-Current Electronics, Siberian Branch; National Research Tomsk State University
Email: korolev@lnp.hcei.tsc.ru
Россия, Tomsk, 634055; Tomsk, 634050
V. Kasyanov
Institute of High-Current Electronics, Siberian Branch; National Research Tomsk State University
Email: korolev@lnp.hcei.tsc.ru
Россия, Tomsk, 634055; Tomsk, 634050
V. Geyman
Institute of High-Current Electronics, Siberian Branch
Email: korolev@lnp.hcei.tsc.ru
Россия, Tomsk, 634055
A. Bolotov
Institute of High-Current Electronics, Siberian Branch
Email: korolev@lnp.hcei.tsc.ru
Россия, Tomsk, 634055
V. Nekhoroshev
Institute of High-Current Electronics, Siberian Branch
Email: korolev@lnp.hcei.tsc.ru
Россия, Tomsk, 634055