Development of Discharge in a Saline Solution at Near-Threshold Voltages
- Authors: Korolev Y.D.1,2,3, Shemyakin I.A.1,2, Kasyanov V.S.1,2, Geyman V.G.1, Bolotov A.V.1, Nekhoroshev V.O.1
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Affiliations:
- Institute of High-Current Electronics, Siberian Branch
- National Research Tomsk State University
- Tomsk Polytechnic University
- Issue: Vol 44, No 6 (2018)
- Pages: 581-587
- Section: Plasma Diagnostics
- URL: https://journals.rcsi.science/1063-780X/article/view/186794
- DOI: https://doi.org/10.1134/S1063780X18060053
- ID: 186794
Cite item
Abstract
The development of a discharge in a point−plane gap filled with a saline solution with a salt content of 3% was studied experimentally. The duration of the voltage pulse applied to the gap was about 2 ms. Data are presented on the formation dynamics of gas microcavities at near-threshold voltages at which gas-discharge plasma appears in some microcavities. The cavities are conglomerates of microbubbles with a typical size of ≈100 μm. At the threshold voltage (≈750 V), the active electrode is covered with a gas layer and the gap voltage is in fact applied to this layer, which leads to the development of discharges in individual microbubbles. In this case, the discharge operates in the form of short current pulses. The number of microcavities filled with plasma increases as the voltage grows above the threshold value. At the plasma boundary, new microbubbles are formed, in which discharges are ignited. As a result, the plasma front propagates from the active electrode into the gap with a characteristic velocity of 103 cm/s.
About the authors
Yu. D. Korolev
Institute of High-Current Electronics, Siberian Branch; National Research Tomsk State University; Tomsk Polytechnic University
Author for correspondence.
Email: korolev@lnp.hcei.tsc.ru
Russian Federation, Tomsk, 634055; Tomsk, 634050; Tomsk, 634050
I. A. Shemyakin
Institute of High-Current Electronics, Siberian Branch; National Research Tomsk State University
Email: korolev@lnp.hcei.tsc.ru
Russian Federation, Tomsk, 634055; Tomsk, 634050
V. S. Kasyanov
Institute of High-Current Electronics, Siberian Branch; National Research Tomsk State University
Email: korolev@lnp.hcei.tsc.ru
Russian Federation, Tomsk, 634055; Tomsk, 634050
V. G. Geyman
Institute of High-Current Electronics, Siberian Branch
Email: korolev@lnp.hcei.tsc.ru
Russian Federation, Tomsk, 634055
A. V. Bolotov
Institute of High-Current Electronics, Siberian Branch
Email: korolev@lnp.hcei.tsc.ru
Russian Federation, Tomsk, 634055
V. O. Nekhoroshev
Institute of High-Current Electronics, Siberian Branch
Email: korolev@lnp.hcei.tsc.ru
Russian Federation, Tomsk, 634055