Auxiliary glow discharge in the trigger unit of a hollow-cathode thyratron
- Авторы: Korolev Y.D.1,2,3, Landl N.V.1,2, Geyman V.G.1, Frants O.B.1,2, Shemyakin I.A.1,2, Nekhoroshev V.O.1,2
-
Учреждения:
- Institute of High-Current Electronics, Siberian Branch
- National Research Tomsk State University
- Tomsk Polytechnic University
- Выпуск: Том 42, № 8 (2016)
- Страницы: 799-807
- Раздел: Low-Temperature Plasma
- URL: https://journals.rcsi.science/1063-780X/article/view/185922
- DOI: https://doi.org/10.1134/S1063780X16080055
- ID: 185922
Цитировать
Аннотация
Results from studies of a low-current glow discharge with a hollow cathode are presented. A specific feature of the discharge conditions was that a highly emissive tablet containing cesium carbonate was placed in the cathode cavity. In the absence of a tablet, the discharge ignition voltage was typically ≥3.5 kV, while the burning voltage was in the range of 500–600 V. The use of the tablet made it possible to decrease the ignition voltage to 280 V and maintain the discharge burning voltage at a level of about 130 V. A model of the current sustainment in a hollow-cathode discharge is proposed. Instead of the conventional secondary emission yield, the model uses a generalized emission yield that takes into account not only ion bombardment of the cathode, but also the emission current from an external source. The model is used to interpret the observed current−voltage characteristics. The results of calculations agree well with the experimental data. It is shown that, in some discharge modes, the external emission current from the cathode can reach 25% of the total discharge current.
Об авторах
Yu. Korolev
Institute of High-Current Electronics, Siberian Branch; National Research Tomsk State University; Tomsk Polytechnic University
Email: landl@lnp.hcei.tsc.ru
Россия, Akademicheskii pr. 2/3, Tomsk, 634055; Leninskii pr. 36, Tomsk, 634050; Leninskii pr. 30, Tomsk, 634050
N. Landl
Institute of High-Current Electronics, Siberian Branch; National Research Tomsk State University
Автор, ответственный за переписку.
Email: landl@lnp.hcei.tsc.ru
Россия, Akademicheskii pr. 2/3, Tomsk, 634055; Leninskii pr. 36, Tomsk, 634050
V. Geyman
Institute of High-Current Electronics, Siberian Branch
Email: landl@lnp.hcei.tsc.ru
Россия, Akademicheskii pr. 2/3, Tomsk, 634055
O. Frants
Institute of High-Current Electronics, Siberian Branch; National Research Tomsk State University
Email: landl@lnp.hcei.tsc.ru
Россия, Akademicheskii pr. 2/3, Tomsk, 634055; Leninskii pr. 36, Tomsk, 634050
I. Shemyakin
Institute of High-Current Electronics, Siberian Branch; National Research Tomsk State University
Email: landl@lnp.hcei.tsc.ru
Россия, Akademicheskii pr. 2/3, Tomsk, 634055; Leninskii pr. 36, Tomsk, 634050
V. Nekhoroshev
Institute of High-Current Electronics, Siberian Branch; National Research Tomsk State University
Email: landl@lnp.hcei.tsc.ru
Россия, Akademicheskii pr. 2/3, Tomsk, 634055; Leninskii pr. 36, Tomsk, 634050
Дополнительные файлы
